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High Speed IGBT
IXSH/IXST 30N60B IXSH/IXST 30N60C Short Circuit SOA Capability
VCES
ICES
tfi
600 V 2.0 V 140 ns 600 V 2.5 V 70 ns
Symbol VCES VCGR VGES VGEM IC25 IC90 ICM SSOA (RBSOA) tSC (SCSOA) PC TJ TJM Tstg Md Weight
Test Conditions TJ = 25C to 150C TJ = 25C to 150C; RGE = 1 M Continuous Transient TC = 25C TC = 90C TC = 25C, 1 ms VGE = 15 V, TJ = 125C, RG = 2.7 Clamped inductive load, VCC= 0.8 VCES VGE = 15 V, VCE = 360 V, TJ = 125C RG = 33 , non repetitive TC = 25C
Maximum Ratings 600 600 20 30 55 30 110 ICM = 60 @ 0.8 VCES 10 200 -55 ... +150 150 -55 ... +150 V V V V A A A A s W C C C
TO-247 AD (IXSH)
(TAB)
TO-268 (D3) ( IXST)
G S G = Gate S = Source (TAB)
TAB = Drain
Features
l l
Mounting torque
(TO-247) TO-247 TO-268
1.13/10 Nm/lb.in. 6 4 300 g g C
l l
International standard packages Short Circuit SOA capability High frequency IGBT New generation HDMOSTM process
Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s
Applications
l
Symbol
Test Conditions
Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 600 4 TJ = 25C TJ = 125C 7 100 1 100 30N60B 30N60C 2.0 2.5 V V A mA nA V V
l l l l
BVCES VGE(th) ICES IGES VCE(sat)
IC IC
= 250 A, VGE = 0 V = 2.5 mA, VCE = VGE
AC motor speed control DC servo and robot drives DC choppers Uninterruptible power supplies (UPS) Switch-mode and resonant-mode power supplies
Advantages
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VCE = 0.8 VCES VGE = 0 V VCE = 0 V, VGE = 20 V VGE = 15 V; IC = IC90
l
l l
Easy to mount with 1 screw (isolated mounting screw hole) Surface mountable, high power case style Reduce assembly time and cost High power density
(c) 2001 IXYS All rights reserved
98519B (11/01)
IXSH/IXST 30N60B IXSH/IXST 30N60C
Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 10 3100 VCE = 25 V, VGE = 0 V, f = 1 MHz 240 30 100 IC = IC90, VGE = 15 V, VCE = 0.5 VCES 30 38 30 Inductive load, TJ = 25C IC = IC90, VGE = 15 V VCE = 0.8 VCES, RG = 4.7 Note 1 30N60B 30N60C 30N60B 30N60C 30N60B 30N60C Inductive load, TJ = 125C IC = IC90, VGE = 15 V VCE = 0.8 VCES, RG = 4.7 Note 1 30 150 90 140 70 1.5 0.7 35 35 0.5 30N60B 30N60C 30N60B 30N60C 30N60B 30N60C 270 150 250 140 2.5 1.2 270 150 270 120 S pF pF pF nC nC nC ns ns ns ns ns ns
1 = Gate 2 = Collector 3 = Emitter Tab = Collector
TO-247 AD Outline
gfs Cies Coes Cres Qg Qge Qgc td(on) tri td(off) tfi Eoff td(on) tri Eon td(off) tfi Eoff RthJC RthCK
IC = IC90; VCE = 10 V, Pulse test, t 300 s, duty cycle 2 %
2.5 mJ 1.2 mJ ns ns mJ ns ns ns mJ mJ 0.62 K/W
TO-268 Outline
(TO-247)
0.25
K/W
Notes: 1. Switching times may increase for VCE (Clamp) > 0.8 VCES, higher TJ or increased RG.
Min Recommended Footprint
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715 5,381,025
IXSH/IXST 30N60B IXSH/IXST 30N60C
Fig.1 Saturation Characteristics
100
TJ = 25C
Fig.2 Output Characterstics
200
13V TJ = 25C VGE = 15V
VGE = 15V
11V 13V
80
160
IC - Amperes
IC - Amperes
11V
9V
60 40
9V
120 80
7V
20
7V
40
5V
0 0 1 2 3 4 5
0
0
2
4
6
8
10
VCE - Volts
VCE - Volts
Fig.3 Collector-Emitter Voltage vs. Gate-Emitter Voltage
120
TJ = 125C VGS=15V 13V
Fig.4 Temperature Dependence of Output Saturation Voltage
1.6
VGE = 15V IC = 60A
80 60 40 20
11V
VCE (sat) - Normalized
100
1.4 1.2
IC = 30A
IC - Amperes
1.0
IC = 15A
9V
0.8 0.6
7V
0 0 2 4 6 8 10
25
50
75
100
125
150
VCE - Volts
TJ - Degrees C
Fig.5 Input Admittance
140 120 Capacitance - pF
Fig.6 Temperature Dependence of Breakdown and Threshold Voltage
10000
f = 1Mhz Ciss
VCE = 10V
IC - Amperes
100 80 60 40 20 0 4 6 8 10 12 14 16
TJ = 125C TJ = 25C
1000
100
Coss
Crss
10 0 5 10 15 20 25 30 35 40
VGE - Volts
VCE-Volts
(c) 2001 IXYS All rights reserved
IXSH/IXST 30N60B IXSH/IXST 30N60C
1.5
Fig.7 Turn-Off Energy per Pulse and Fall Time on Collector Current
TJ = 125C
7.5
2.0
Fig.8 Dependence of Turn-Off Energy Per Pulse and Fall Time on RG
TJ = 125C E(OFF) IC = 60A
8
RG = 10
E(OFF) - milliJoules
E(ON) - millijoules
E(ON) - millijoules
1.5
1.0
E(ON)
5.0
E(OFF)
E(ON)
6
E(OFF) - millijoules
1.0
IC = 30A E(ON) E(OFF)
4
0.5
2.5
0.5
E(ON) IC = 15A E(OFF)
2
0.0
0 20 40 60
0.0 80
0.0
0
0
10
20
30
40
50
IC - Amperes
RG - Ohms
Fig.9 Gate Charge Characteristic Curve
15 12
IC =30A VCE = 300V
Fig.10 Turn-Off Safe Operating Area
100
IC - Amperes
VGE - Volts
10
TJ = 125C
9 6 3 0 0 25 50 75 100 125
RG = 4.7 dV/dt < 5V/ns
1
0.1 0 100 200 300 400 500 600
Qg - nanocoulombs
VCE - Volts
Fig.11 Transient Thermal Impedance
1
D=0.5 D=0.2
ZthJC (K/W)
0.1 D=0.1
D=0.05 D=0.02 D=0.01 Single pulse
0.01
D = Duty Cycle
0.001
0.00001
0.0001
0.001
0.01
0.1
1
Pulse Width - Seconds
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715 5,381,025

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